PTFA091201HL V1

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant 0 55 • Broadband internal matching -10 50 • -20 45 Typical EDGE performance - Average output power = 50 W - Gain = 18.5 dB - Efficiency = 44% • Typical CW performance - Output power at P–1dB = 135 W - Gain = 17 dB - Efficiency = 64% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power Efficiency -30 40 -40 35 -50 30 400 KHz -60 25 -70 20 -80 600 KHz -90 Drain Efficiency (%) Modulation Spectrum (dB) VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 15 10 36 38 40 42 44 46 48 50 Output Power, avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 50 W (AVG), ƒ = 959.8 MHz Characteristic Symbol Min Typ Max Unit EVM (RMS) — 2.5 — % Modulation Spectrum @ 400 kHz ACPR — –60 — dBc Modulation Spectrum @ 600 kHz ACPR — –74 — dBc Gain Gps — 18.5 — dB Drain Efficiency ηD — 44 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two–tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18.0 18.5 — dB Drain Efficiency ηD 45 48 — % Intermodulation Distortion IMD — –28 –26 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.07 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 750 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 120 W CW, soldered) RθJC 0.28 °C/W Ordering Information Type and Version Package Package Description Shipping Marking PTFA091201GL V1 PG-63248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA091201GL PTFA091201HL V1 PG-64248-2 Thermally-enhanced earless flange, single-ended Tray PTFA091201HL *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 750 mA, POUT = 120 W VDD = 28 V, IDQ = .750 mA, ƒ1 = 959 MHz, ƒ2 = 960 MHz 60 Gain 18 55 -10 Return Loss 17 -15 50 -20 16 900 910 920 930 940 950 -25 45 960 -20 IMD (dBc) Efficiency 19 Gain (dB) -10 65 Return Loss (dB), Efficiency (%) 20 -30 3rd Order -40 5th -50 -60 7th -70 36 37 38 39 40 41 42 43 44 45 46 47 48 49 Output Power, Avg (dBm) Frequency (MHz) IM3 vs. Output Power at Selected Biases Gain vs. Output Power VDD = 28 V, ƒ1 = 959 MHz, ƒ2 = 960 MHz VDD = 28 V, ƒ = 960 MHz series show Idq -20 20.0 -25 Power Gain (dB) -30 IMD (dBc) IDQ = 1125 mA 19.5 525 mA -35 750 mA -40 -45 -50 940 mA -55 19.0 IDQ = 750 mA 18.5 18.0 17.5 IDQ = 375 mA 17.0 16.5 -60 -65 16.0 37 39 41 43 45 47 49 38 42 44 46 48 50 52 54 Output Power (dBm) Output Power, Avg (dBm) Data Sheet 40 3 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution EDGE Performance Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz VDD = 28 V, IDQ = 750 mA, ƒ = 960 MHz 7 55 Efficiency 45 6 40 5 35 4 30 3 25 2 20 EVM 1 40 42 44 46 48 19 60 17 40 16 30 Efficiency 20 10 14 50 40 42 Output Power, Avg. (dBm) 44 46 48 50 52 Output Power (dBm) Output Power (P–1dB) vs. Supply Voltage IS-95 CDMA Performance IDQ = 750 mA, ƒ = 960 MHz VDD = 28 V, IDQ = 750 mA, ƒ = 960 MHz 52.5 40 -10 Efficiency 35 Drain Efficiency (%) 52.0 Output Power (dBm) 50 Gain 15 10 38 70 18 15 0 36 20 50 51.5 51.0 50.5 50.0 49.5 -20 30 -30 25 -40 Adj 750 kHz 20 -50 15 -60 10 -70 Alt1 1.98 MHz 5 24 26 28 30 -80 32 Supply Voltage (V) Data Sheet Drain Efficiency (%) 8 TCASE = 25°C TCASE = 90°C Adj. Ch. Power Ratio (dBc) TCASE = –25°C Gain (dB) 9 Drain Efficiency (%) RMS EVM (Average %) . Typical Performance (cont.) 34 36 38 40 42 44 46 Output Power (dBm), Avg. 4 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.4 A Normalized Bias Voltage (V) 1.03 1.2 A 1.02 3.0 A 1.01 6.0 A 1.00 9.0 A 0.99 12.0 A 16.0 A 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G MHz R jX R jX 920 5.86 –0.32 2.20 0.69 930 5.84 –0.27 2.17 0.69 940 5.85 –0.02 2.16 0.85 950 5.82 0.10 2.15 0.92 960 5.79 0.27 2.13 1.02 Z0 = 50 Ω 0 .1 Z Load 0.5 0.4 960 MHz 0.3 0.1 0 .0 D- 920 MHz 0.2 Z Source 960 MHz 920 MHz 0.1 W AV T OW ARD L OA GT HS EL E N - W AV E LE NGT H S T OW A R S Z Load Ω Data Sheet 5 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2KV C3 0.001µF R4 2KV R5 5.1K V C4 10µF 35V R6 10 V C5 0.1µF L1 V DD R7 5.1K V C6 33pF C7 0.1µF C8 0.01µF C9 33pF C14 33pF C15 1µF C16 10µF 50V l5 C17 0.1µF C18 10µF 50V l6 C10 33pF RF_IN l1 C24 1.0pF R8 10 V C27 33pF DUT l2 l3 l4 C11 1.2pF C12 7.5pF C13 0.7pF l9 l 10 C25 1.0pF C26 2.4pF l8 l7 l11 l 12 l13 RF_OUT C28 0.5pF C19 33pF C20 1µF C21 10µF 50V a09 1201ef_sch L2 C22 0.1µF C23 10µF 50V Reference circuit schematic for ƒ = 960 MHz Circuit Assembly Information DUT PTFA091201GL or PTFA091201HL PCB 0.76 mm [.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6, l7 l8 l9 l10 l11 l12 l13 Electrical Characteristics at 960 MHz1 0.072 0.115 0.029 0.062 0.149 0.122 0.027 0.103 0.072 0.155 0.013 0.015 Rogers TMM4 LDMOS Transistor 2 oz. copper Dimensions: L x W ( mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 7.5 Ω λ, 70.0 Ω λ, 55.0 Ω λ, 7.9 Ω λ, 7.9 Ω λ, 7.9 Ω λ, 38.0 Ω λ, 50.0 Ω λ, 50.0 Ω 12.27 x 1.40 19.53 x 1.40 5.08 x 1.40 9.53 x 16.15 26.31 x 0.71 20.96 x 1.17 4.06 x 15.24 15.75 x 15.24 11.02 x 15.24 25.78 x 2.13 2.24 x 1.40 2.59 x 1.40 0.483 0.769 0.200 0.375 1.036 0.825 0.160 0.620 0.434 1.015 0.088 0.102 x x x x x x x x x x x x 0.055 0.055 0.055 0.636 0.028 0.046 0.600 0.600 0.600 0.084 0.055 0.055 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Reference Circuit (cont.) R5 C4 C5 C9 C8 R4 C3 R3 C6 R1 R6 R7 C7 C1 LM R2 C18 VDD QQ1 C2 C14 C15 Q1 C16 C17 R8 C24 RF_IN C10 C11 VDD L1 C28 RF_OUT C12 C25 C27 C26 C13 C22 C21 C19 C20 VDD L2 C23 A091201in_01 A091201out_01 a 0 9 1 2 0 1 e f_ a s s y Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C7 C17, C22 C6, C9, C10, C14, C19, C27 C8 C11 C12 C13 C15, C20 C16, C18, C21, C23 C24, C25 C26 C28 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 33 pF Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 100B 330 Capacitor, 0.01 µF Ceramic capacitor, 1.2 pF Ceramic capacitor, 7.5 pF Ceramic capacitor, 0.7 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 1.0 pF Ceramic capacitor, 2.4 pF Ceramic capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 5.1 k-ohms Chip Resistor 10 ohms ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 200B 103 100B 1R2 100B 7R5 100B 0R7 920C105 TPSE106K050R0400 100B 1R0 100B 2R4 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Package Outline Specifications Package PG-63248-2 4.83±0.51 [.190±.020] CL 45° X 2.72 [45° X .107] 6. 45° X 1.78 [45° X .070] 2X R1.63 [R.064] 9.78 ± 0.08 [.385 ± .003] CL 3X R0.51+1.14 –0.25 [R.020+.045 –.010 ] 20.27 [.798] 3.63+0.25 –0.13 [.143 +.010 –.005 ] CL 0.064 (.0025) –A– PG-63248-2(G)_po_8-28-08 34.04 ± 0.08 [1.340 ± .003] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. Data Sheet 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 5. Gold plating thickness: < 0.254 micron [< 10 microinch] 6. Tabs may protrude 0.13 [.005] max from body. 7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. 8 of 10 Rev. 02, 2008-08-27 PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package PG-64248-2 9.78 ± 0.08 [.385 ± .003] pg-64248-2(h)_po_8-28-08 20.57 ± 0.08 [.810 ± .003] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 5. Gold plating thickness: < 0.254 micron [< 10 microinch] 6. Tabs may protrude 0.13 [.005] max from body. 7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 02, 2008-08-27 PTFA091201GL/HL-V1 Confidential, Limited Internal Distribution Revision History: 2008-08-27 2008-06-16, Preliminary Data Sheet Previous Version: Page all Subjects (major changes since last revision) Remove Preliminary designation 8, 9 Revise package diagrams and notes Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA toll-free or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-08-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02, 2008-08-27